PART |
Description |
Maker |
125244 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
127141D |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
127141H |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
115280 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
126284 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
128244 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器,红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm From old datasheet system
|
红外LED SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
OD-24X24-C |
HIGH-POWER GaAlAs EMITTER CHIPS
|
OptoDiode Corp
|
OD-880-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
SFH4289 |
GaAlAs-IR-Lumineszenzdiode in SMT-Geh漉se mit Linse GaAlAs Infrared Emitter in SMT Package with lens 发动器红外光在SMT Lumineszenzdiode,盖赫锓林斯本身麻省理工学院在SMT封装的GaAIAs红外发射器与镜头
|
Electronic Theatre Controls, Inc. ETC OSRAM GmbH
|
PDI-E838 |
GaAlAs High power IR LED Emitters
|
Advanced Photonix, Inc.
|
PDI-E809 |
GaAlAs High Power IR LED Emitters
|
Advanced Photonix, Inc.
|